LUMINESCENT TIME DECAY OF EXCITONS BOUND TO ZN-O COMPLEXES IN GAP

被引:50
作者
JAYSON, JS
BHARGAVA, RN
DIXON, RW
机构
关键词
D O I
10.1063/1.1658573
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4972 / +
页数:1
相关论文
共 27 条
[2]  
BLAKMORE JS, 1962, SEMICONDUCTOR STATIS
[3]   VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].
CASEY, HC ;
ERMANIS, F ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+
[4]  
CASTELLAN GW, 1951, SEMICONDUCTING MATER
[5]   TEMPERATURE-DEPENDENT RADIATIVE RECOMBINATION MECHANISMS IN GAP(ZN,O) AND GAP(CD,O) [J].
CUTHBERT, JD ;
HENRY, CH ;
DEAN, PJ .
PHYSICAL REVIEW, 1968, 170 (03) :739-+
[6]   RADIATIVE RECOMBINATION IN P-TYPE GAP DOPED WITH ZINC AND OXYGEN [J].
DEBYE, JAW .
PHYSICAL REVIEW, 1966, 147 (02) :589-&
[7]   RECOMBINATION KINETICS OF ELECTRONS AND HOLES AT ISOELECTRONIC IMPURITIES - GAP(ZN,O) [J].
DISHMAN, JM ;
DIDOMENI.M .
PHYSICAL REVIEW B, 1970, 1 (08) :3381-&
[8]  
FAULKNER RA, PRIVATE COMMUNICATIO
[9]   ANOMALOUS ELECTRICAL PROPERTIES OF SOLUTION-GROWN P-TYPE GAP [J].
FOSTER, LM ;
WOODS, JF ;
LEWIS, JE .
APPLIED PHYSICS LETTERS, 1969, 14 (01) :25-&
[10]   RADIATIVE PAIR RECOMBINATION AND SURFACE RECOMBINATION IN GAP PHOTOLUMINESCENCE - (DONOR-ACCEPTOR PAIR BANDS - 20 TO 298 DEGREES K - AR LASER EXCITATION - E/T) [J].
GERSHENZON, M ;
MIKULYAKRM .
APPLIED PHYSICS LETTERS, 1966, 8 (10) :245-+