TRANSMISSION ELECTRON-MICROSCOPE IMAGE-CONTRAST OF EPITAXIAL INTERFACES WITH SMALL MISFITS

被引：13

作者：

AURET, FD ^{[1
]}

BALL, CAB ^{[1
]}

SNYMAN, HC ^{[1
]}

机构：

[1] UNIV PORT ELIZABETH,DEPT PHYS,PORT ELIZABETH 6000,SOUTH AFRICA

来源：

THIN SOLID FILMS | 1979年 / 61卷 / 03期

关键词：

D O I：

10.1016/0040-6090(79)90473-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lines of diffraction contrast have been observed near the interfaces of epitaxial layers of III-V compounds in transmission electron microscope samples cut perpendicular to the growth plane. The contrast occurs even for extremely small misfits. To explain the origin of these diffraction contours, a numerical stress analysis was carried out and the diffraction contrast was calculated using the dynamical theory of image contrast. © 1979.

引用

页码：289 / 295

页数：7

共 8 条

[1]

Abrahams, Weisberg, Buiocchi, Blanc, J. Mater. Sci., 4, (1969)

[2]

Carnahan, Luther, Wilkes, Applied Numerical Methods, (1969)

[3]

Howie, Whelan, Diffraction Contrast of Electron Microscope Images of Crystal Lattice Defects. II. The Development of a Dynamical Theory, Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 263, (1961)

[4]

Hirsch, Howie, Nicholson, Pashley, Electron Microscopy of Thin Films, (1971)

[5]

Tholen, A rapid method for obtaining electron microscope contrast maps of various lattice defects, Philosophical Magazine, 22, (1970)

[6]

Head, The Computer Generation of Electron Microscope Pictures of Dislocations, Australian Journal of Physics, 20, (1967)

[7]

Clarebrough, Apparent Anomalous Absorption and Image Matching, Australian Journal of Physics, 22, (1969)

[8]

Humpreys, Hirsch, Absorption parameters in electron diffraction theory, Philosophical Magazine, 18, (1968)

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