INTERMETALLIC FORMATION IN GOLD-ALUMINUM SYSTEMS

被引:195
作者
PHILOFSKY, E
机构
关键词
D O I
10.1016/0038-1101(70)90172-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1391 / +
页数:1
相关论文
共 12 条
[1]  
BERNSTEIN L, 1959, SEMICOND PROD, V34
[2]  
BLECH IA, 1966, J ELECTROCHEM SOC, V113, P1052
[3]  
BROWNING GV, 1964, PHYS FAILURE ELECT, V4, P428
[4]  
CHEN G, 1967, IEEE T PARTS MATER P, V3, P1949
[5]   EXPANDED CONTACTS AND INTERCONNEXIONS TO MONOLITHIC SILICON INTEGRATED CIRCUITS [J].
CUNNINGHAM, JA .
SOLID-STATE ELECTRONICS, 1965, 8 (09) :735-+
[6]  
HANSEN M, 1958, CONSTITUTION BINARY, P69
[7]   SOME ASPECTS OF THE GROWTH OF DIFFUSION LAYERS IN BINARY SYSTEMS [J].
KIDSON, GV .
JOURNAL OF NUCLEAR MATERIALS, 1961, 3 (01) :21-29
[8]  
RUGGERIO E, 1965, 4 P ANN MICR S
[9]  
SCHMIDT R, 1962, IRE T ELECTRON DEV, VED9, P506
[10]  
SCHNABLE GL, 1966, AF306023610 CONTR