TEMPERATURE-DEPENDENCE OF THE E0 AND E0 + DELTA-0 GAPS OF INP UP TO 600-DEGREES-C

被引:61
作者
HANG, Z [1 ]
SHEN, H [1 ]
POLLAK, FH [1 ]
机构
[1] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036
关键词
D O I
10.1016/0038-1098(90)90005-V
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using the contactless modulation spectroscopy technique of photoreflectance we have measured the temperature variation of the Eo (direct gap) and Eo + △o (spin-orbit split component) optical features of InP up to 600°C. We have evaluated the parameters which describe the temperature dependence of the band gap energies and broadening function. © 1990.
引用
收藏
页码:15 / 18
页数:4
相关论文
共 15 条
  • [1] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM
    ALLEN, PB
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1495 - 1505
  • [2] Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109
  • [3] Casey H.C., 1978, HETEROSTRUCTURE LASE
  • [4] ELECTROMODULATION SPECTROSCOPY OF CONFINED SYSTEMS
    GLEMBOCKI, OJ
    SHANABROOK, BV
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (04) : 603 - 607
  • [5] COMPREHENSIVE INVESTIGATION OF POLISH-INDUCED SURFACE STRAIN IN (100) AND (111) GAAS AND INP
    HANG, Z
    SHEN, H
    POLLAK, FH
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3233 - 3242
  • [6] TEMPERATURE-DEPENDENCE OF THE FUNDAMENTAL ENERGY-GAP IN GAAS
    KIM, CK
    LAUTENSCHLAGER, P
    CARDONA, M
    [J]. SOLID STATE COMMUNICATIONS, 1986, 59 (12) : 797 - 802
  • [7] TEMPERATURE-DEPENDENCE OF THE INTERBAND CRITICAL-POINT PARAMETERS OF INP
    LAUTENSCHLAGER, P
    GARRIGA, M
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4813 - 4820
  • [8] INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE
    LAUTENSCHLAGER, P
    GARRIGA, M
    LOGOTHETIDIS, S
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9174 - 9189
  • [9] Madelung O., 1982, LANDOLTBORNSTEIN NUM, VIII/17a
  • [10] PHOTOREFLECTANCE LINE SHAPE AT FUNDAMENTAL EDGE IN ULTRAPURE GAAS
    SHAY, JL
    [J]. PHYSICAL REVIEW B, 1970, 2 (04): : 803 - &