CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS

被引：69

作者：

HABRAKEN, FHPM ^{[1
]}

KUIPER, AET ^{[1
]}

VANOOSTROM, A ^{[1
]}

TAMMINGA, Y ^{[1
]}

THEETEN, JB ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.329902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：404 / 415

页数：12

共 39 条

[1] HIGH-FIELD DARK CURRENTS IN THIN CVD SILICON-NITRIDE [J].

ANDREWS, JM ;

JACKSON, BG ;

POLITO, WJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :495-502

[2] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].

ASPNES, DE ;

THEETEN, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365

[3] DIELECTRIC FUNCTION OF SI-SIO2 AND SI-SI3N4 MIXTURES [J].

ASPNES, DE ;

THEETEN, JB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4928-4935

[4] PROPERTIES OF SIXOYNZ FILMS ON SI [J].

BROWN, DM ;

GRAY, PV ;

HEUMANN, FK ;

PHILIPP, HR ;

TAFT, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :311-&

[5] OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J].

CHANG, CC ;

BOULIN, DM .

SURFACE SCIENCE, 1977, 69 (02) :385-402

[6] NONVOLATILE SEMICONDUCTOR MEMORY DEVICES [J].

CHANG, JJ .

PROCEEDINGS OF THE IEEE, 1976, 64 (07) :1039-1059

[7]

CHU WK, 1978, BACKSCATTERING SPECT, pCH8

[8]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[9] NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS [J].

DELORD, JF ;

SCHROTT, AG ;

FAIN, SC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :517-520

[10]

FRENZEL H, 1980, 8TH P INT VAC C CANN, P537

← 1 2 3 4 →