CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS

被引：69

作者：

HABRAKEN, FHPM ^{[1
]}

KUIPER, AET ^{[1
]}

VANOOSTROM, A ^{[1
]}

TAMMINGA, Y ^{[1
]}

THEETEN, JB ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.329902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：404 / 415

页数：12

相关论文

共 39 条

[1] HIGH-FIELD DARK CURRENTS IN THIN CVD SILICON-NITRIDE
ANDREWS, JM
JACKSON, BG
POLITO, WJ
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 495 - 502
[2] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
THEETEN, JB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1359 - 1365
[3] DIELECTRIC FUNCTION OF SI-SIO2 AND SI-SI3N4 MIXTURES
ASPNES, DE
THEETEN, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4928 - 4935
[4] PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
GRAY, PV
HEUMANN, FK
PHILIPP, HR
TAFT, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &
[5] OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA
CHANG, CC
BOULIN, DM
[J]. SURFACE SCIENCE, 1977, 69 (02) : 385 - 402
[6] NONVOLATILE SEMICONDUCTOR MEMORY DEVICES
CHANG, JJ
[J]. PROCEEDINGS OF THE IEEE, 1976, 64 (07) : 1039 - 1059
[7] CHU WK, 1978, BACKSCATTERING SPECT, pCH8
[8] DAVIS LE, 1976, HDB AUGER ELECTRON S
[9] NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS
DELORD, JF
SCHROTT, AG
FAIN, SC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 517 - 520
[10] FRENZEL H, 1980, 8TH P INT VAC C CANN, P537

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