VIOLET-BLUE GAN HOMOJUNCTION LIGHT-EMITTING-DIODES WITH RAPID THERMAL ANNEALED P-TYPE LAYERS

被引：75

作者：

KHAN, MA

CHEN, Q

SKOGMAN, RA

KUZNIA, JN

机构：

[1] APA Optics Inc., Blaine

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 16期

关键词：

D O I：

10.1063/1.113687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the fabrication and optical-electrical characterization of violet-blue GaN homojunction light emitting diodes. Rapid thermal annealing at 1150°C (for 30 s) was used to activate the p-dopant species (Mg), which resulted in p-type GaN whose photoluminescence response centered around 438 nm is much stronger than that obtained from material annealed in the growth chamber at lower temperatures (700-800°C) and a longer time (20 min).© 1995 American Institute of Physics.

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页码：2046 / 2047

页数：2

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