BACKGROUND LIMITED PERFORMANCE IN P-DOPED GAAS/GA0.71IN0.29AS0.39P0.61 QUANTUM-WELL INFRARED PHOTODETECTORS

被引：5

作者：

HOFF, J ^{[1
]}

KIM, S ^{[1
]}

ERDTMANN, M ^{[1
]}

WILLIAMS, R ^{[1
]}

PIOTROWSKI, J ^{[1
]}

BIGAN, E ^{[1
]}

RAZEGHI, M ^{[1
]}

BROWN, GJ ^{[1
]}

机构：

[1] USAF,WRIGHT LAB,MAT DIRECTORATE,WL MLPO,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.115479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As 0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.© 1995 American Institute of Physics.

引用

页码：22 / 24

页数：3

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