ENHANCED BAND-GAP LUMINESCENCE IN STRAIN-SYMMETRIZED (SI)M/(GE)N SUPERLATTICES

We report on band-gap luminescence in strain-symmetrized, (Si)m/(Ge)n superlattices grown on a step-graded, alloy buffer with a reduced dislocation density, using Sb as a surfactant. The luminescence efficiency for a (Si)9/(Ge)6 and (Si)6/(Ge)4 SUPerlattice is strongly enhanced compared with a corresponding Si0.6Ge0.4 alloy reference sample. The luminescence signals can be attributed to interband transitions of excitons localized at potential fluctuations in the superlattice. The observed systematic shift of the band-gap luminescence to lower energies with increasing period length compares well with results of a simple, effective-mass calculation. An increasing superlattice band gap and a reduction in luminescence intensity is observed if the Si and Ge layers are interdiffused by thermal annealing. The band gap for a (Si)6/(Ge)4 superlattice was also measured with absorption spectroscopy. The absorption coefficient, as determined by direct transmission, is in the order of 10(3) cm-1 about 0.1 eV above the band gap.