A CONTRIBUTION TO THE RECOMBINATION STATISTICS OF EXCESS CARRIERS IN SEMICONDUCTORS

被引：31

作者：

LANDSBERG, PT

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1957年 / 70卷 / 03期

关键词：

D O I：

10.1088/0370-1301/70/3/302

中图分类号：

Q [生物科学];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：282 / 296

页数：15

共 11 条

[1] APPEL J, 1956, Z NATURFORSCH PT A, V11, P689
[2] EFFECT OF NICKEL AND COPPER IMPURITIES ON THE RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM
BURTON, JA
HULL, GW
MORIN, FJ
SEVERIENS, JC
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 853 - 859
[3] CORRECTION
LANDSBERG, PT
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (01): : 154 - 154
[4] RECOMBINATION THEORY FOR INDIUM ANTIMONIDE
LANDSBERG, PT
MOSS, TS
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (06): : 661 - 669
[5] DEFECTS WITH SEVERAL TRAPPING LEVELS IN SEMICONDUCTORS
LANDSBERG, PT
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1056 - 1059
[6] LOW TEMPERATURE MAGNETORESISTANCE ANOMALIES IN INDIUM ANTIMONIDE
MACKINTOSH, IM
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (03): : 403 - 406
[7] PHOTON-RADIATIVE RECOMBINATION IN PBSE, PBTE AND PBS
MACKINTOSH, IM
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 115 - 118
[8] THE LIFETIME OF ADDED CARRIERS IN INSB
MACKINTOSH, IM
ALLEN, JW
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12): : 985 - 990
[9] ON THE RELATION BETWEEN THE SUM OF DONOR AND ACCEPTOR CONCENTRATION AND LIFETIME IN SINGLE CRYSTAL GERMANIUM
RANSOM, P
ROSE, FWG
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (416): : 646 - 650
[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

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