LPE AND VPE IN1-XGAXASYP1-Y-INP - TRANSPORT-PROPERTIES, DEFECTS, AND DEVICE CONSIDERATIONS

被引:34
作者
BHATTACHARYA, PK
KU, JW
OWEN, SJT
OLSEN, GH
CHIAO, SH
机构
[1] RCA LABS,PRINCETON,NJ 08540
[2] HEWLETT PACKARD LTD,DIV OPTO ELECTR,PALO ALTO,CA 94303
关键词
D O I
10.1109/JQE.1981.1071069
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:150 / 161
页数:12
相关论文
共 62 条
[1]   HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J].
AUKERMAN, LW ;
WILLARDSON, RK .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) :939-940
[2]   TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J].
BHATTACHARYA, PK ;
KU, JW ;
OWEN, SJT ;
AEBI, V ;
COOPER, CB ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :304-306
[3]   EVIDENCE OF TRAPPING IN DEVICE-QUALITY LIQUID-PHASE-EPITAXIAL IN1-XGAXASYP1-Y [J].
BHATTACHARYA, PK ;
KU, JW ;
OWEN, SJT ;
CHIAO, SH ;
YEATS, R .
ELECTRONICS LETTERS, 1979, 15 (23) :753-755
[4]  
BHATTACHARYA PK, UNPUBLISHED
[5]  
BHATTACHARYA PK, 1979, 7TH P INT S GALL ARS, P199
[6]   SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J].
BLEICHER, M ;
LANGE, E .
SOLID-STATE ELECTRONICS, 1973, 16 (03) :375-380
[7]   ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES [J].
BLOOD, P .
PHYSICAL REVIEW B, 1972, 6 (06) :2257-&
[8]   COMPONENTS FOR OPTICAL COMMUNICATIONS-SYSTEMS - A REVIEW [J].
BOTEZ, D ;
HERSKOWITZ, GJ .
PROCEEDINGS OF THE IEEE, 1980, 68 (06) :689-731
[9]   CYCLOTRON-RESONANCE IN N-TYPE IN1-XGAXASYP1-Y [J].
BRENDECKE, H ;
STORMER, HL ;
NELSON, RJ .
APPLIED PHYSICS LETTERS, 1979, 35 (10) :772-774
[10]  
BROOKS H, 1951, PHYS REV, V83, P879