USE OF THE BIASED ESTIMATOR IN THE INTERPRETATION OF SPECTROSCOPIC ELLIPSOMETRY DATA

被引:92
作者
JELLISON, GE
机构
[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
来源
APPLIED OPTICS | 1991年 / 30卷 / 23期
关键词
D O I
10.1364/AO.30.003354
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The use of the biased estimator in the fitting of spectroscopic ellipsometry data is examined and applied to data from two-channel polarization modulation ellipsometry experiments. It is pointed out that the use of the biased estimator, as opposed to the unbiased estimator that is usually found in the literature, allows the experimentalist to weight properly the more accurate parts of the spectrum, to switch among different representations of the data, and to calculate a goodness of fit. The fit to data taken on a 59-nm SiO2 film on Si is examined with both the biased and the unbiased estimators.
引用
收藏
页码:3354 / 3360
页数:7
相关论文
共 23 条
[1]  
[Anonymous], 1969, DATA REDUCTION ERROR
[2]   SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365
[3]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[4]   INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302
[5]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[6]   OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW LETTERS, 1979, 43 (14) :1046-1050
[7]  
Azzam R. M. A., 1977, ELLIPSOMETRY POLARIZ
[9]   INFLUENCE OF SUBSTRATE STRUCTURE ON THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON STUDIED BY INSITU ELLIPSOMETRY [J].
COLLINS, RW ;
CAVESE, JM .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4169-4176
[10]  
HELMS CR, 1988, PHYSICS CHEM SIO2 SI