PREPARATION OF C-AXIS-ORIENTED PLT THIN-FILMS BY THE METALORGANIC CHEMICAL VAPOR-DEPOSITION METHOD

被引：23
|
作者：
TOMINAGA, K [1 ]
MIYAJIMA, M [1 ]
SAKASHITA, Y [1 ]
SEGAWA, H [1 ]
OKADA, M [1 ]
机构：
[1] NIPPON MIN CO LTD, TODA, SAITAMA 335, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期
关键词：
C-axis orientation; Ferroelectric; MOCVD; Perovskite; PLT thin film;
D O I：
10.1143/JJAP.29.L1874
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
La-modified lead titanate (PLT) thin films are prepared by the metalorganic chemical vapor deposition method. Tetraethyl lead, titanium tetraisopropoxide and trisdipivaloylmethanato lanthanum are used as source materials. The films obtained at 600°C under reduced pressure of 6 Torr constitute PLT of the single perovskite phase, and highly c-axis-oriented films are grown on MgO(100). The crystal structures are transferred from the tetragonal to the cubic structure with increasing molar fraction of La2O3. The dielectric constant and tan δ are around 800 to 2700 and 0.04 to 0.1. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L1874 / L1876
页数：3
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