B-DOPING USING B2H6 IN GAS SOURCE SI MOLECULAR-BEAM EPITAXY

被引：8

作者：

HIRAYAMA, H ^{[1
]}

HIROI, M ^{[1
]}

KOYAMA, K ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期

关键词：

D O I：

10.1063/1.105042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new gas mixing system was devised for the control of a gaseous dopant during gas source Si molecular beam epitaxy. The performance of this gas mixing system was demonstrated using B2H6 gas dopant for B doping. B doping level control over five decades was successfully achieved. The B-doping concentration was found to be proportional to the B2H6/Si2H6 flow rate ratio. This relationship holds in both the supply-controlled and the reaction-controlled growth regions. This result indicates that B2H6 is incorporated into epitaxial layers by a similar dissociative adsorption mechanism on Si2H6.

引用

页码：1991 / 1993

页数：3

共 12 条

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