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TEMPERATURE-DEPENDENCE OF STORAGE TIME IN SILICON P+-N-N+ SWITCHING DIODES AND REDUCTION OF HARMONIC DISTORTION
被引:3
作者
:
ROSEN, A
论文数:
0
引用数:
0
h-index:
0
ROSEN, A
MARTINELLI, RU
论文数:
0
引用数:
0
h-index:
0
MARTINELLI, RU
CAULTON, M
论文数:
0
引用数:
0
h-index:
0
CAULTON, M
机构
:
来源
:
ELECTRONICS LETTERS
|
1980年
/ 16卷
/ 02期
关键词
:
D O I
:
10.1049/el:19800049
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:66 / 68
页数:3
相关论文
共 4 条
[1]
MINORITY CARRIER LIFETIME IN P-N JUNCTION DEVICES
BYCZKOWSKI, M
论文数:
0
引用数:
0
h-index:
0
BYCZKOWSKI, M
MADIGAN, JR
论文数:
0
引用数:
0
h-index:
0
MADIGAN, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(08)
: 878
-
881
[2]
ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING
KUNO, HJ
论文数:
0
引用数:
0
h-index:
0
KUNO, HJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(01)
: 8
-
&
[3]
SILICON PIN DIODE AS MICROWAVE RADAR PROTECTOR AT MEGAWATT LEVELS
LEENOV, D
论文数:
0
引用数:
0
h-index:
0
LEENOV, D
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(02)
: 53
-
&
[4]
MARTINELLI RU, 1979, IEDM TECH DIG, P556
←
1
→
共 4 条
[1]
MINORITY CARRIER LIFETIME IN P-N JUNCTION DEVICES
BYCZKOWSKI, M
论文数:
0
引用数:
0
h-index:
0
BYCZKOWSKI, M
MADIGAN, JR
论文数:
0
引用数:
0
h-index:
0
MADIGAN, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(08)
: 878
-
881
[2]
ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING
KUNO, HJ
论文数:
0
引用数:
0
h-index:
0
KUNO, HJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(01)
: 8
-
&
[3]
SILICON PIN DIODE AS MICROWAVE RADAR PROTECTOR AT MEGAWATT LEVELS
LEENOV, D
论文数:
0
引用数:
0
h-index:
0
LEENOV, D
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(02)
: 53
-
&
[4]
MARTINELLI RU, 1979, IEDM TECH DIG, P556
←
1
→