EFFECT OF REDUNDANT MICROSTRUCTURE ON ELECTROMIGRATION-INDUCED FAILURE

被引：20

作者：

LEARN, AJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 08期

关键词：

D O I：

10.1063/1.1653923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：292 / &

共 10 条

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ATTARDO, MJ ;

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[2] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].

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DHEURLE, FM ;

HORSTMANN, RE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) :461-+

[3] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J].

ATTARDO, MJ ;

ROSENBERG, R .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2381-+

[4] ELECTROMIGRATION DAMAGE OF GRAIN-BOUNDARY TRIPLE POINTS IN A1 THIN FILMS [J].

BERENBAUM, L .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :880-+

[5] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].

BLACK, JR .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&

[6]

BLACK JR, 1969, IEEE T ELECTRON DEVI, VED16, P338

[7] ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORS [J].

BLAIR, JC ;

GHATE, PB ;

HAYWOOD, CT .

APPLIED PHYSICS LETTERS, 1970, 17 (07) :281-&

[8]

HEURLE FM, 1971, MET T, V2, P683

[9]

LEARN AJ, 1971 P REL PHYS S

[10] RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS [J].

ROSENBERG, R ;

BERENBAUM, L .

APPLIED PHYSICS LETTERS, 1968, 12 (05) :201-+

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