TWO-DIMENSIONAL SIMULATION AND MEASUREMENT OF HIGH-PERFORMANCE MOSFETS MADE ON A VERY THIN SOI FILM

被引:97
作者
YOSHIMI, M
HAZAMA, H
TAKAHASHI, M
KAMBAYASHI, S
WADA, T
KATO, K
TANGO, H
机构
关键词
D O I
10.1109/16.19959
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:493 / 503
页数:11
相关论文
共 22 条
[1]   GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN [J].
BACCARANI, G ;
WORDEMAN, MR ;
DENNARD, RH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :452-462
[2]   TRANSCONDUCTANCE OF SILICON-ON-INSULATOR (SOI) MOSFETS [J].
COLINGE, JP .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) :573-574
[3]   REDUCTION OF KINK EFFECT IN THIN-FILM SOI MOSFETS [J].
COLINGE, JP .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :97-99
[4]   SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].
COLINGE, JP .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :244-246
[5]   REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS [J].
COLINGE, JP .
ELECTRONICS LETTERS, 1986, 22 (04) :187-188
[6]  
HAMASAKI T, 1985, 17TH C SOL STAT DEV, P135
[7]   SUPPRESSION OF DRAIN-CURRENT OVERSHOOT IN SOI-MOSFETS USING AN ULTRATHIN SOI SUBSTRATE [J].
HAZAMA, H ;
YOSHIMI, M ;
TAKAHASHI, M ;
KAMBAYASHI, S ;
TANGO, H .
ELECTRONICS LETTERS, 1988, 24 (20) :1266-1267
[8]   NUMERICAL-ANALYSIS OF SWITCHING CHARACTERISTICS IN SOI MOSFETS [J].
KATO, K ;
TANIGUCHI, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :133-139
[9]   ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING [J].
KATO, K ;
WADA, T ;
TANIGUCHI, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :458-462
[10]  
KEMMOCHI M, COMMUNICATION