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TWO-DIMENSIONAL SIMULATION AND MEASUREMENT OF HIGH-PERFORMANCE MOSFETS MADE ON A VERY THIN SOI FILM
被引:97
作者
:
YOSHIMI, M
论文数:
0
引用数:
0
h-index:
0
YOSHIMI, M
HAZAMA, H
论文数:
0
引用数:
0
h-index:
0
HAZAMA, H
TAKAHASHI, M
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, M
KAMBAYASHI, S
论文数:
0
引用数:
0
h-index:
0
KAMBAYASHI, S
WADA, T
论文数:
0
引用数:
0
h-index:
0
WADA, T
KATO, K
论文数:
0
引用数:
0
h-index:
0
KATO, K
TANGO, H
论文数:
0
引用数:
0
h-index:
0
TANGO, H
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1989年
/ 36卷
/ 03期
关键词
:
D O I
:
10.1109/16.19959
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:493 / 503
页数:11
相关论文
共 22 条
[1]
GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN
[J].
BACCARANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BACCARANI, G
;
WORDEMAN, MR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
WORDEMAN, MR
;
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(04)
:452
-462
[2]
TRANSCONDUCTANCE OF SILICON-ON-INSULATOR (SOI) MOSFETS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
COLINGE, JP
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(11)
:573
-574
[3]
REDUCTION OF KINK EFFECT IN THIN-FILM SOI MOSFETS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
COLINGE, JP
.
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(02)
:97
-99
[4]
SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
COLINGE, JP
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(04)
:244
-246
[5]
REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett Packard Lab, Palo Alto, CA,, USA, Hewlett Packard Lab, Palo Alto, CA, USA
COLINGE, JP
.
ELECTRONICS LETTERS,
1986,
22
(04)
:187
-188
[6]
HAMASAKI T, 1985, 17TH C SOL STAT DEV, P135
[7]
SUPPRESSION OF DRAIN-CURRENT OVERSHOOT IN SOI-MOSFETS USING AN ULTRATHIN SOI SUBSTRATE
[J].
HAZAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
HAZAMA, H
;
YOSHIMI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
YOSHIMI, M
;
TAKAHASHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
TAKAHASHI, M
;
KAMBAYASHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
KAMBAYASHI, S
;
TANGO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
TANGO, H
.
ELECTRONICS LETTERS,
1988,
24
(20)
:1266
-1267
[8]
NUMERICAL-ANALYSIS OF SWITCHING CHARACTERISTICS IN SOI MOSFETS
[J].
KATO, K
论文数:
0
引用数:
0
h-index:
0
KATO, K
;
TANIGUCHI, K
论文数:
0
引用数:
0
h-index:
0
TANIGUCHI, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(01)
:133
-139
[9]
ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING
[J].
KATO, K
论文数:
0
引用数:
0
h-index:
0
KATO, K
;
WADA, T
论文数:
0
引用数:
0
h-index:
0
WADA, T
;
TANIGUCHI, K
论文数:
0
引用数:
0
h-index:
0
TANIGUCHI, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
:458
-462
[10]
KEMMOCHI M, COMMUNICATION
←
1
2
3
→
共 22 条
[1]
GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN
[J].
BACCARANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BACCARANI, G
;
WORDEMAN, MR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
WORDEMAN, MR
;
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(04)
:452
-462
[2]
TRANSCONDUCTANCE OF SILICON-ON-INSULATOR (SOI) MOSFETS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
COLINGE, JP
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(11)
:573
-574
[3]
REDUCTION OF KINK EFFECT IN THIN-FILM SOI MOSFETS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
COLINGE, JP
.
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(02)
:97
-99
[4]
SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
COLINGE, JP
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(04)
:244
-246
[5]
REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett Packard Lab, Palo Alto, CA,, USA, Hewlett Packard Lab, Palo Alto, CA, USA
COLINGE, JP
.
ELECTRONICS LETTERS,
1986,
22
(04)
:187
-188
[6]
HAMASAKI T, 1985, 17TH C SOL STAT DEV, P135
[7]
SUPPRESSION OF DRAIN-CURRENT OVERSHOOT IN SOI-MOSFETS USING AN ULTRATHIN SOI SUBSTRATE
[J].
HAZAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
HAZAMA, H
;
YOSHIMI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
YOSHIMI, M
;
TAKAHASHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
TAKAHASHI, M
;
KAMBAYASHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
KAMBAYASHI, S
;
TANGO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Corp, Japan
TANGO, H
.
ELECTRONICS LETTERS,
1988,
24
(20)
:1266
-1267
[8]
NUMERICAL-ANALYSIS OF SWITCHING CHARACTERISTICS IN SOI MOSFETS
[J].
KATO, K
论文数:
0
引用数:
0
h-index:
0
KATO, K
;
TANIGUCHI, K
论文数:
0
引用数:
0
h-index:
0
TANIGUCHI, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(01)
:133
-139
[9]
ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING
[J].
KATO, K
论文数:
0
引用数:
0
h-index:
0
KATO, K
;
WADA, T
论文数:
0
引用数:
0
h-index:
0
WADA, T
;
TANIGUCHI, K
论文数:
0
引用数:
0
h-index:
0
TANIGUCHI, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
:458
-462
[10]
KEMMOCHI M, COMMUNICATION
←
1
2
3
→