FIELD-ASSISTED MINORITY-CARRIER ELECTRON-TRANSPORT ACROSS A P-INGAAS-P-INP HETEROJUNCTION

被引:17
作者
GREGORY, PE
ESCHER, JS
HYDER, SB
HOUNG, YM
ANTYPAS, GA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期
关键词
D O I
10.1116/1.569771
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1483 / 1487
页数:5
相关论文
共 16 条
[1]   MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF VAPOR-PHASE GROWTH OF IN(1-X)GAXP [J].
BANS, VS ;
ETTENBERG, M .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (06) :1119-1129
[2]   TRANSFERRED ELECTRON PHOTOEMISSION FROM INP [J].
BELL, RL ;
JAMES, LW ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1974, 25 (11) :645-646
[3]  
BELL RL, 1973, NEGATIVE ELECTRON AF
[4]   SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J].
CHEUNG, DT ;
CHIANG, SY ;
PEARSON, GL .
SOLID-STATE ELECTRONICS, 1975, 18 (03) :263-266
[6]  
Escher J. S., 1975, Critical Reviews in Solid State Sciences, V5, P577, DOI 10.1080/10408437508243514
[7]   SCHOTTKY-BARRIER HEIGHT OF AU-PARA-INGAASP ALLOYS LATTICE-MATCHED TO INP [J].
ESCHER, JS ;
JAMES, LW ;
SANKARAN, R ;
ANTYPAS, GA ;
MOON, RL ;
BELL, RL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :874-875
[8]   TRANSFERRED ELECTRON PHOTOEMISSION TO 1.65-MU FROM AN INGAASP HETEROJUNCTION CATHODE [J].
ESCHER, JS ;
GREGORY, PE ;
ANTYPAS, GA ;
SANKARAN, R ;
HOUNG, YM .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :447-449
[9]   THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].
FRENSLEY, WR ;
KROEMER, H .
PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652
[10]   LIQUID-PHASE-EPITAXIAL GROWTH OF LATTICE-MATCHED IN0.53GA0.47AS ON (100)-ORIENTED INP [J].
HYDER, SB ;
ANTYPAS, GA ;
ESCHER, JS ;
GREGORY, PE .
APPLIED PHYSICS LETTERS, 1977, 31 (09) :551-553