SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS

被引：87

作者：

KHAIBULLIN, IB ^{[1
]}

SHTYRKOV, EI ^{[1
]}

ZARIPOV, MM ^{[1
]}

BAYAZITOV, RM ^{[1
]}

GALJAUTDINOV, MF ^{[1
]}

机构：

[1] ACAD SCI USSR, KAZAN PHYS TECH INST, KAZAN BRANCH, KAZAN, RUSSIA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 3-4期

关键词：

D O I：

10.1080/00337577808240852

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Comparative investigation of the process of the structure reordering of disordered implanted silicon layers after thermal (800 degree C, 30 min) and pulse laser annealing have been carried out. The new laser method of annealing implanted layers has a number of interesting features which provide great efficiency and locality of semiconductor doping without considerable heating of the base material and redistribution of implanted impurities. On the base analysing of investigation of kinetics of layer photostimulated recrystallization and calculation of temperature fields the possible mechanisms of laser annealing are also discussed.

引用

页码：225 / 233

页数：9

共 34 条

[1] AFANASEV VN, 1974, IAN SSSR NEORG MATER, V10, P1962
[2] ANTONENKO AK, 1976, FIZ TEKH POLUPROV, V10, P139
[3] BOURGOIN JC, 1973, J CHEM PHYS, V59, P4042, DOI [10.1063/1.1680596, 10.1063/1.433143]
[4] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048
[5] CHENG LG, 1970, PHYS REV B, V4, P1558
[6] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
CROWDER, BL
TITLE, RS
BRODSKY, MH
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &
[7] ION BOMBARDMENT AND IMPLANTATION
DEARNALEY, G
[J]. REPORTS ON PROGRESS IN PHYSICS, 1969, 32 (04) : 405 - +
[8] DVURECHENSKY AV, 1972, FIZ TEKH POLUPROV, V6, P1834
[9] GERASIMENKO NN, 1975, P C ION IMPLANTATION, P263
[10] GERASIMENKO NN, 1974, FIZ TEKH POLUPROV, V1, P2195

← 1 2 3 4 →