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ERROR IN SURFACE-STATE DETERMINATION CAUSED BY NUMERICAL DIFFERENTIATION OF Q-V DATA
被引:3
作者
:
KIROV, K
论文数:
0
引用数:
0
h-index:
0
KIROV, K
ALEXSANDROVA, S
论文数:
0
引用数:
0
h-index:
0
ALEXSANDROVA, S
MINCHEV, G
论文数:
0
引用数:
0
h-index:
0
MINCHEV, G
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1978年
/ 21卷
/ 02期
关键词
:
D O I
:
10.1016/0038-1101(78)90263-0
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:341 / 344
页数:4
相关论文
共 5 条
[1]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[2]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
[J].
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
;
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
SOLID-STATE ELECTRONICS,
1965,
8
(02)
:145
-+
[3]
A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
[J].
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
.
SOLID-STATE ELECTRONICS,
1970,
13
(06)
:873
-+
[4]
ERROR ANALYSIS OF SURFACE STATE DENSITY DETERMINATION USING MOS CAPACITANCE METHOD
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
;
TOLE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TOLE, AB
;
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
PIERRET, RF
.
SOLID-STATE ELECTRONICS,
1969,
12
(09)
:689
-+
[5]
STATIC TECHNIQUE FOR PRECISE MEASUREMENTS OF SURFACE-POTENTIAL AND INTERFACE STATE DENSITY IN MOS STRUCTURES
[J].
ZIEGLER, K
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL, INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER
FRAUNHOFER GESELL, INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER
ZIEGLER, K
;
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL, INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER
FRAUNHOFER GESELL, INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER
KLAUSMANN, E
.
APPLIED PHYSICS LETTERS,
1975,
26
(07)
:400
-402
←
1
→
共 5 条
[1]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[2]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
[J].
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
;
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
SOLID-STATE ELECTRONICS,
1965,
8
(02)
:145
-+
[3]
A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
[J].
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
.
SOLID-STATE ELECTRONICS,
1970,
13
(06)
:873
-+
[4]
ERROR ANALYSIS OF SURFACE STATE DENSITY DETERMINATION USING MOS CAPACITANCE METHOD
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
;
TOLE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TOLE, AB
;
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
PIERRET, RF
.
SOLID-STATE ELECTRONICS,
1969,
12
(09)
:689
-+
[5]
STATIC TECHNIQUE FOR PRECISE MEASUREMENTS OF SURFACE-POTENTIAL AND INTERFACE STATE DENSITY IN MOS STRUCTURES
[J].
ZIEGLER, K
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL, INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER
FRAUNHOFER GESELL, INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER
ZIEGLER, K
;
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL, INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER
FRAUNHOFER GESELL, INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, FED REP GER
KLAUSMANN, E
.
APPLIED PHYSICS LETTERS,
1975,
26
(07)
:400
-402
←
1
→