NOBLE-METAL CDTE INTERFACE FORMATION

被引：45
作者：
FRIEDMAN, DJ
LINDAU, I
SPICER, WE
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.37.731
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：731 / 739
页数：9
相关论文
共 34 条
[1]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[2]   ROLE OF CATION DISSOCIATION IN SCHOTTKY-BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR METAL INTERFACES [J].
BRUCKER, CF ;
BRILLSON, LJ .
THIN SOLID FILMS, 1982, 93 (1-2) :67-74
[3]  
Cardona M., 1978, PHOTOEMISSION SOLIDS
[4]   ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].
CHU, JH ;
XU, SH ;
TANG, DY .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :1064-1066
[5]   CHANGES IN THE LOCAL CHEMICAL-COMPOSITION DURING THE HG1-XCDXTE-AL INTERFACE FORMATION [J].
DANIELS, RR ;
MARGARITONDO, G ;
DAVIS, GD ;
BYER, NE .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :50-52
[6]   INTERACTIONS BETWEEN CLEAVED (HG, CD)TE SURFACES AND DEPOSITED OVERLAYERS OF AL AND INDIUM [J].
DAVIS, GD ;
BYER, NE ;
RIEDEL, RA ;
MARGARITONDO, G .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1915-1921
[7]   DEPOSITION OF AU OVERLAYERS ONTO CLEAVED (HG,CD)TE SURFACES [J].
DAVIS, GD ;
BECK, WA ;
BYER, NE ;
DANIELS, RR ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :546-550
[8]   INTERFACE CHEMISTRY OF TERNARY SEMICONDUCTORS - LOCAL MORPHOLOGY OF THE HG1-XCDXTE(110)-CR INTERFACE [J].
FRANCIOSI, A ;
PHILIP, P ;
PETERMAN, DJ .
PHYSICAL REVIEW B, 1985, 32 (12) :8100-8107
[9]   EFFECT OF DIFFERENT CATION-ANION BOND STRENGTHS ON METAL TERNARY-SEMICONDUCTOR INTERFACE FORMATION - CU/HG0.75CD0.25TE AND CU/CDTE [J].
FRIEDMAN, DJ ;
CAREY, GP ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1986, 34 (08) :5329-5342
[10]   OVERLAYER-CATION REACTION AT THE PT/HG1-XCDXTE INTERFACE [J].
FRIEDMAN, DJ ;
CAREY, GP ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1987, 35 (03) :1188-1195
1234