High-resolution core-level studies of silicon surfaces

被引：60

作者：

Uhrberg, RIG

Landemark, E

Chao, YC

机构：

[1] Department of Physics and Measurement Technology, Linköping Institute of Technology

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1995年 / 75卷

关键词：

core-level spectroscopy; dimer; high resolution; Si(100)2x1:As; Si(100)2x1:H; Si(100)2x1:K;

D O I：

10.1016/0368-2048(95)02538-3

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

We present high-resolution core-level spectroscopy results for the clean Si(100) surface and for a few cases of ordered overlayers. For the two varieties of the clean surface, i.e. the 2 x 1 room temperature phase and the c(4 x 2) low temperature phase, both core-level results and angle-resolved valence band spectra are discussed. Three different adsorbates (H, K and As) have been used to obtain different types of symmetric dimer structures on the surface. Similarities and differences between these systems with respect to the surface and sub-surface contributions to the Si2p spectra are discussed.

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收藏

页码：197 / 207

页数：11

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