INTERSUBBAND TRANSITION IN SI-BASED QUANTUM-WELLS AND APPLICATION FOR INFRARED PHOTODETECTORS

被引：31
作者：
KARUNASIRI, G
机构：
[1] Department of Electrical Engineering
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4B期
关键词：
INTERSUBBAND; QUANTUM WELL; SILICON-GERMANIUM; INFRARED; PHOTODETECTORS; INTERVALENCE BAND; INTERNAL PHOTOEMISSION;
D O I：
10.1143/JJAP.33.2401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Intersubband transitions in quantum wells and superlattices have attracted a great deal of interest because of their potential applications in infrared detection and imaging. This is particularly important in Si-based heterostructures due to the advantage of monolithic integration with the conventional silicon signal processing electronics. In this paper, experimental observations of intersubband transition in SiGe/Si quantum wells and 6-doped layers in Si will be reviewed. In addition to intersubband transitions, two normal incident absorption processes; intervalence band transition and internal photoemission from two-dimensional hole gas in the quantum well will also be discussed. Finally, the progress in the application of SiGe/Si multiple quantum well structures for the fabrication of infrared detectors will be discussed.
引用
收藏
页码：2401 / 2411
页数：11
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