PHOTOLUMINESCENCE INVESTIGATION OF GAN FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON (100)GAAS

被引：57

作者：

HONG, CH

PAVLIDIS, D

BROWN, SW

RAND, SC

机构：

[1] Solid State Electronics Laboratory, Department of Electronic Engineering and Computational Science, University of Michigan, Ann Arbor

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.358862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3.36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted, donor-acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K. © 1995 American Institute of Physics.

引用

页码：1705 / 1709

页数：5

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