PLANARIZED GROWTH OF ALGAAS/GAAS HETEROSTRUCTURES ON PATTERNED SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：1

作者：

HO, MC

CHIN, TP

TU, CW

ASBECK, PM

机构：

[1] Department of Electrical and Computer Engineering, University of California, San Diego

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.354739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The profiles of AlGaAs/GaAs heterostructures grown by gas-source molecular beam epitaxy (GSMBE) on patterned substrates at different growth temperatures have been studied. It was found that at higher substrate temperature, the GSMBE growth results in Al clustering and the formation of high index planes. With a proper combination of low growth temperature and etched profile, a quasiplanarized surface is obtainable. A process simulation program is found to be capable of simulating the GSMBE growth profile at lower substrate temperature with reasonable accuracy.

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页码：2128 / 2130

页数：3

相关论文

共 8 条

[1] OPTIMIZATION OF AL STEP COVERAGE THROUGH COMPUTER-SIMULATION AND SCANNING ELECTRON-MICROSCOPY [J].

BLECH, IA ;

FRASER, DB ;

HASZKO, SE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (01) :13-19

[2] DETERMINATION OF V/III RATIOS ON PHOSPHIDE SURFACES DURING GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

CHIN, TP ;

LIANG, BW ;

HOU, HQ ;

HO, MC ;

CHANG, CE ;

TU, CW .

APPLIED PHYSICS LETTERS, 1991, 58 (03) :254-256

[3] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

BALLAMY, WC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785

[4] BURIED HETEROSTRUCTURE LASER FABRICATED USING 3-STEP GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

LIEVIN, JL ;

BONNEVIE, D ;

POINGT, F ;

STARCK, C ;

SIGOGNE, D ;

LEGOUEZIGOU, O ;

GOLDSTEIN, L .

APPLIED PHYSICS LETTERS, 1991, 59 (12) :1407-1408

[5] PLASMA AND WET CHEMICAL ETCHING OF IN0.5GA0.5P [J].

LOTHIAN, JR ;

KUO, JM ;

REN, F ;

PEARTON, SJ .

JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (04) :441-445

[6] DIELECTRIC ASSISTED LIFTOFF TECHNIQUE FOR THE FORMATION AND MONOLITHIC INTEGRATION OF ELECTRONIC AND OPTICAL-DEVICES [J].

METZE, GM ;

CORNFELD, AB ;

LAUX, PE ;

HO, TC ;

PANDE, KP .

APPLIED PHYSICS LETTERS, 1990, 57 (24) :2576-2578

[7] NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS [J].

SMITH, FW ;

CALAWA, AR ;

CHEN, CL ;

MANFRA, MJ ;

MAHONEY, LJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :77-80

[8] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].

TSANG, WT ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :293-296