FIELD-EFFECT TRANSISTOR WITH A CONDUCTING POLYMER FILM

被引：43
作者：
TSUMURA, A
FUCHIGAMI, H
KOEZUKA, H
机构：
[1] Mitsubishi Electric Corporation, Materials and Electronic Devices Laboratory 1-1, Amagasaki, Hyogo, 661
来源：
SYNTHETIC METALS | 1991年 / 41卷 / 03期
关键词：
D O I：
10.1016/0379-6779(91)91583-V
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spin-coated conducting polymer films of poly(3-hexylthiophene) (PHT) and poly(2,5-thienylene vinylene) (PTV) have been demonstrated to be useful in a field-effect transistor (FET) as a semiconducting layer. The device with a doped PHT film shows enhance-type FET characteristics although they are unstable. On the other hand, the one with a non-doped PTV film shows very stable and excellent FET characteristics with large source current.
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收藏
页码：1181 / 1184
页数：4
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