EFFECT OF RESONANT TUNNELING ON THE CURRENT-VOLTAGE CHARACTERISTICS OF SIN TUNNEL-JUNCTIONS

被引：0
|
作者：
DEVYATOV, IA
KUPRIYANOV, MY
机构：
来源：
JETP LETTERS | 1990年 / 52卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Noninteracting localized centers in the insulating layer of an SIN junction cause a current deficiency on the current-voltage characteristic of the junction at high voltages. This factor explains the current-voltage characteristics observed experimentally for structures with a high-T(c) superconducting electrode and makes it possible to determine the modulus of the order parameter of this electrode.
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页码：311 / 316
页数：6
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