EFFECT OF RESONANT TUNNELING ON THE CURRENT-VOLTAGE CHARACTERISTICS OF SIN TUNNEL-JUNCTIONS

被引：0

作者：

DEVYATOV, IA

KUPRIYANOV, MY

机构：

来源：

JETP LETTERS | 1990年 / 52卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Noninteracting localized centers in the insulating layer of an SIN junction cause a current deficiency on the current-voltage characteristic of the junction at high voltages. This factor explains the current-voltage characteristics observed experimentally for structures with a high-T(c) superconducting electrode and makes it possible to determine the modulus of the order parameter of this electrode.

引用

页码：311 / 316

页数：6

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