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- [7] ANNEALING AND OXIDATION BEHAVIOR OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED TUNGSTEN SILICIDE LAYERS ON POLYCRYSTALLINE SILICON GATESJOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 2830 - 2835SADANA, DKMORGAN, AENORCOTT, MHNAIK, S
- [9] High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline siliconJOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 141 - 145Rogel, RSarret, MMohammed-Brahim, TBonnaud, OKleider, JP