INTRA-SHALLOW-DONOR PHOTOCONDUCTIVITY IN SEMI-INSULATING GAAS

被引：1
作者：
KARPIERZ, K [1 ]
SADOWSKI, ML [1 ]
机构：
[1] POLISH ACAD SCI,HIGH PRESSURE RES CTR,WARSAW 42,POLAND
来源：
ACTA PHYSICA POLONICA A | 1991年 / 79卷 / 01期
关键词：
D O I：
10.12693/APhysPolA.79.121
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p+1 transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs.
引用
收藏
页码：121 / 124
页数：4
相关论文
共 50 条
12345