INTRA-SHALLOW-DONOR PHOTOCONDUCTIVITY IN SEMI-INSULATING GAAS

被引：1

作者：

KARPIERZ, K ^{[1
]}

SADOWSKI, ML ^{[1
]}

机构：

[1] POLISH ACAD SCI,HIGH PRESSURE RES CTR,WARSAW 42,POLAND

来源：

ACTA PHYSICA POLONICA A | 1991年 / 79卷 / 01期

关键词：

D O I：

10.12693/APhysPolA.79.121

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p+1 transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs.

引用

页码：121 / 124

页数：4

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