DEFECT DEPENDENCE OF THE DIELECTRIC PERMEABILITY OF QN(TCNQ)2

被引：34

作者：

HOLCZER, K

GRUNER, G

MIHALY, G

JANOSSY, A

机构：

[1] Central Research Institute for Physics, H-1525 Budapest

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 03期

关键词：

D O I：

10.1016/0038-1098(79)90423-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The conductivity and 9.1 GHz dielectric constant of neutron irradiated Qn(TCNQ)2 single crystals are strongly affected by defect concentrations less than 1 %. This indicates long range electronic coherence of the order of 100 lattice constants in the non-irradiated material for which the coherence length may still be impurity limited. It is suggested that a collective excitation of electrons is responsible for the temperature dependence of the large dielectric constant. © 1979.

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页码：145 / 149

页数：5

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