LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY

被引：19
作者：
BANDY, SG
COLLINS, DM
NISHIMOTO, CK
机构：
[1] Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 08期
关键词：
Field-effect transistors; Gallium arsenide; Molecular-beam epitaxial growth;
D O I：
10.1049/el:19790154
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The growth of m.b.e. GaAs suitable for f.e.t. fabrication is reported. The m.b.e. structure consists of an n+ = 2.5 × 1018 cm−3 contact layer on top of an n = 3.5 × 1017 cm−3 active layer. Using this material, f.e.t.s have been fabricated that have a minimum noise figure of 1.5 dB with an associated gain of 15 dB at 8 GHz. These are the best results yet reported for low-noise m.b.e. GaAs f.e.t.s. © 1979, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：218 / 219
页数：2
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