A SIMPLE EEPROM CELL USING TWIN POLYSILICON THIN-FILM TRANSISTORS

被引：27

作者：

CAO, M

ZHAO, TM

SARASWAT, KC

PLUMMER, JD

机构：

[1] Center for Integrated Systems, Stanford University, Stanford

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 08期

关键词：

D O I：

10.1109/55.296224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A planar twin polysilicon thin film transistor (TFT) EEPROM cell fabricated with a simple low temperature (less-than-or-equal-to 600-degrees-C) process is demonstrated in this work. The gate electrodes of the two TFT's are connected to form the floating gate of the cell, while the source and drain of the larger TFT are connected to form the control gate. The cell is programmed and erased by Fowler-Nordheim tunneling. The threshold voltage of the cell can be shifted by as much as 8 V after programming. This new EEPROM cell can dramatically reduce the cost of production by reducing manufacturing complexity.

引用

页码：304 / 306

页数：3