ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS - GE PREPARED BY LIQUID-PHASE EPITAXY

被引：27

作者：

KRESSEL, H ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 09期

关键词：

D O I：

10.1063/1.1654979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：511 / 513

页数：3

共 12 条

[1]

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[2] ELECTRON DIFFUSION LENGTH IN SOLUTION-GROWN GAAS-GE+ [J].

ASHLEY, KL ;

CARR, DL ;

ROMANOMO.R .

APPLIED PHYSICS LETTERS, 1973, 22 (01) :23-25

[3] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J].

ETTENBERG, M ;

KRESSEL, H ;

GILBERT, SL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :827-831

[4]

ETTENBERG M, UNPUBLISHED PAPER

[5] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J].

KRESSEL, H ;

HAWRYLO, FZ ;

LEFUR, P .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4059-+

[6]

KRESSEL H, 1973, J QUANTUM ELECTRON, VQE9, P383

[7] THIN SOLUTION MULTIPLE LAYER EPITAXY [J].

LOCKWOOD, HF ;

ETTENBERG, M .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) :81-+

[8] GERMANIUM-DOPED GALLIUM ARSENIDE [J].

ROSZTOCZY, FE ;

ERMANIS, F ;

HAYASHI, I ;

SCHWARTZ, B .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :264-+

[9] DISTRIBUTION COEFFICIENT OF GERMANIUM IN GALLIUM ARSENIDE CRYSTALS GROWN FROM GALLIUM SOLUTIONS [J].

ROSZTOCZY, FE ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :426-+

[10] EFFICIENT ELECTRON EMISSION FROM GAAS-AL1-XGAXAS OPTOELECTRONIC COLD-CATHODE STRUCTURES [J].

SCHADE, H ;

NELSON, H ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1971, 18 (10) :413-&

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