IRON DOPED BULK SEMIINSULATING GAAS

被引:6
作者
GRAY, ML
PETERSON, L
TANG, RS
SABAN, SB
BLAKEMORE, JS
机构
[1] SEH AMER INC,VANCOUVER,WA 98682
[2] WESTERN WASHINGTON STATE UNIV,DEPT PHYS & ASTRON,BELLINGHAM,WA 98225
关键词
D O I
10.1063/1.352981
中图分类号
O59 [应用物理学];
学科分类号
摘要
As an acceptor dopant with a solid:liquid distribution coefficient k(s) < 1, iron is an example of an impurity which can be used in modest amounts to ensure that an adequate fraction of EL2 midgap defects are ionized along the length of a melt-grown GaAs crystal, as desired for semi-insulating behavior. The results of such deliberate doping with iron (when N(Fe) is in the mid-10(15) cm-3 range) are reported for crystals grown by both the liquid encapsulated Czochralski and the vertical gradient freeze methods. Except in the very tail region of such crystals (when N(Fe) > N(EL2) and high resistivity p-type behavior results), GaAs with this modest iron modification to the compensation balance behaves with quite ordinary semi-insulating properties. The iron acceptors are then all ionized, and are optically ''invisible.''
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页码:3319 / 3325
页数:7
相关论文
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