REDUCTION OF STRESS IN GAAS WITH IN-DOPED GAAS INTERMEDIATE LAYER GROWN ON SI SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

This paper is the first report on the In doping effect to control the stress in the GaAs layer on a Si substrate. The wafer bending of InGaAs on Si decreases as the In concentration increases. The wafer bending linearly changes with the growth temperature, in contrast to undoped GaAs on Si in which the wafer bending is not changed with the growth temperature. By inserting the In-doped layer as an intermediate layer between GaAs and the Si substrate, the stress and dislocation in the upper undoped GaAs layer are reduced. These results show the possibility of controlling the stress and the dislocation in the GaAs layer on Si.