Analysis of thermal stress through finite element analysis during vertical Bridgman crystal growth of 2 inch sapphire

被引：0

作者：

Kim, Jae Hak ^{[1
]}

Lee, Wook Jin ^{[2
]}

Park, Yong Ho ^{[1
]}

Lee, Young Cheol ^{[2
]}

机构：

[1] Pusan Natl Univ, Dept Mat Sci & Engn, Busan 46241, South Korea

[2] Korea Inst Ind Technol, Dongnam Reg Div, Busan 46749, South Korea

来源：

JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2015年 / 25卷 / 06期

关键词：

Sapphire; Thermal stress; Vertical Bridgman; Crystal growth; FEM;

D O I：

10.6111/JKCGCT.2015.25.6.231

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

引用

页码：231 / 238

页数：8

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