IDENTIFICATION OF LATTICE-DEFECTS IN V3SI (A15 STRUCTURE) BY HIGH-VOLTAGE ELECTRON-MICROSCOPY AND CONTRAST SIMULATION

被引：0

作者：

BENLAMINE, A ^{[1
]}

SENATEUR, JP ^{[1
]}

REYNAUD, F ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE,F-38400 ST MARTIN HERES,FRANCE

来源：

JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES | 1980年 / 5卷 / 06期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：745 / &

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