IDENTIFICATION OF LATTICE-DEFECTS IN V3SI (A15 STRUCTURE) BY HIGH-VOLTAGE ELECTRON-MICROSCOPY AND CONTRAST SIMULATION

被引：0
|
作者：
BENLAMINE, A [1 ]
SENATEUR, JP [1 ]
REYNAUD, F [1 ]
机构：
[1] INST NATL POLYTECH GRENOBLE,F-38400 ST MARTIN HERES,FRANCE
来源：
JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES | 1980年 / 5卷 / 06期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：745 / &
相关论文
共 50 条
  • [11] ELECTRON-MICROSCOPIC INVESTIGATION OF A V5SI3 NEEDLE-SHAPED PRECIPITATE IN V3SI (A15 STRUCTURE)
    BENLAMINE, A
    REYNAUD, F
    SENATEUR, JP
    BOUAZRA, Y
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 52 (05): : 657 - 668
  • [12] SUBCELLULAR IDENTIFICATION OF EXOGENOUS PARTICLES BY HIGH-VOLTAGE ELECTRON-MICROSCOPY
    ADEE, RR
    LAIDLER, JJ
    AMERICAN INDUSTRIAL HYGIENE ASSOCIATION JOURNAL, 1973, 34 (11): : 507 - 511
  • [13] CONTRAST AND RESOLUTION OF SMALL DISLOCATION LOOPS IN HIGH-VOLTAGE ELECTRON-MICROSCOPY
    CHEN, LJ
    SESHAN, K
    THOMAS, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (01): : 309 - 319
  • [14] HIGH-RESOLUTION IMAGES AND MARTENSITIC TRANSITION OF V3SI BY 1 MV ELECTRON-MICROSCOPY
    ONOZUKA, T
    YAMAMOTO, T
    HIRABAYASHI, M
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1984, 32 (01): : 21 - 31
  • [15] A TRANSMISSION ELECTRON-MICROSCOPY STUDY OF LATTICE-DEFECTS IN MN3O4 HAUSMANNITE
    COUDERC, JJ
    FRITSCH, S
    BRIEU, M
    VANDERSCHAEVE, G
    FAGOT, M
    ROUSSET, A
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 70 (05): : 1077 - 1094
  • [16] DETERMINATION OF MOBILITY OF LATTICE VACANCIES IN PURE IRON BY HIGH-VOLTAGE ELECTRON-MICROSCOPY
    TABATA, T
    FUJITA, H
    ISHII, H
    IGAKI, K
    ISSHIKI, M
    SCRIPTA METALLURGICA, 1981, 15 (12): : 1317 - 1321
  • [17] LATTICE-DEFECTS IN PLASTICALLY DEFORMED V3SI SINGLE-CRYSTALS STUDIED BY POSITRON-ANNIHILATION
    DORING, C
    ANDREEFF, A
    BERTRAM, M
    BRAUER, G
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (18): : 2627 - 2633
  • [18] MEASUREMENT OF MOBILITIES OF POINT-DEFECTS IN METALS BY HIGH-VOLTAGE ELECTRON-MICROSCOPY
    KIRITANI, M
    YOSHIDA, N
    JOURNAL OF ELECTRON MICROSCOPY, 1976, 25 (01): : 51 - 51
  • [19] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF LATTICE-DEFECTS IN TIO2 AND SNO2
    SUZUKI, K
    ICHIHARA, M
    TAKEUCHI, S
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1991, 63 (04): : 657 - 665
  • [20] Determination of diffusion parameters and activation energy of diffusion in V3Si phase with A15 crystal structure
    Kumar, A. K.
    Laurila, T.
    Vuorinen, V.
    Paul, A.
    SCRIPTA MATERIALIA, 2009, 60 (06) : 377 - 380
12345