IDENTIFICATION OF LATTICE-DEFECTS IN V3SI (A15 STRUCTURE) BY HIGH-VOLTAGE ELECTRON-MICROSCOPY AND CONTRAST SIMULATION

被引：0
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作者：
BENLAMINE, A [1 ]
SENATEUR, JP [1 ]
REYNAUD, F [1 ]
机构：
[1] INST NATL POLYTECH GRENOBLE,F-38400 ST MARTIN HERES,FRANCE
来源：
JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES | 1980年 / 5卷 / 06期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：745 / &
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