YBA2CU3O7-DELTA-AG-AL AL2O3 PB TUNNEL-JUNCTIONS BASED ON THE SUPERCONDUCTING PROXIMITY EFFECT

被引：24
作者：
GIJS, MAM
SCHOLTEN, D
VANROOY, T
GERRITS, AM
机构：
[1] Philips Research Laboratories
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 24期
关键词：
D O I：
10.1063/1.104186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
YBa2Cu3O7-δ-Ag-Al/Al 2O3/Pb superconducting tunnel junctions with high subgap resistance were fabricated using the proximity effect induced superconductivity in the Ag-Al layer by the YBa2Cu3O7-δ film. At low temperature an energy gap of 9-10 meV is found to be induced in the aluminum layer. Above 20 K the induced gap disappears mainly due to the decreased normal metal coherence length. At higher voltages (V≤120 meV) the dynamic conductance dI/dV∝V, characteristic for the normal tunneling density of states of the oxide superconductor.
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页码：2600 / 2602
页数：3
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