PHOTOCONDUCTIVITY OF NEUTRON-IRRADIATED GALLIUM ARSENIDE

被引：8

作者：

BORGHI, L

STEFANO, PD

MASCHERETTI, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 11期

关键词：

D O I：

10.1063/1.1658513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4665 / +

页数：1

共 10 条

[1] RADIATION EFFECTS IN GAAS [J].

AUKERMAN, LW ;

GRAFT, RD ;

DAVIS, PW ;

SHILLIDAY, TS .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) :3590-+

[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[3] PHOTOCONDUCTIVITY OF CHROMIUM-DOPED GALLIUM ARSENIDE [J].

BROOM, RF .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3483-&

[4] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J].

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :315-322

[5] ANELASTICITY DUE TO INTRINSIC DEFECTS IN GAAS [J].

CHAKRAVERTY, BK ;

DREYFUS, RW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :631-+

[6] THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].

CRONIN, GR ;

HAISTY, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :874-877

[7] PROPERTIES OF SEMI-INSULATING GAAS [J].

GOOCH, CH ;

HOLEMAN, BR ;

HILSUM, C .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2069-&

[8] PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS [J].

HAISTY, RW ;

STRATTON, R ;

MEHAL, EW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) :829-&

[9] EFFECTS OF NEUTRON IRRADIATION ON OPTICAL PROPERTIES OF THIN FILMS AND BULK GAAS AND GAP [J].

PANKEY, T ;

DAVEY, JE .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :697-&

[10] NEUTRON-INDUCED EFFECTS IN SEMICONDUCTORS [J].

PENHALE, LG .

INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1963, 14 (06) :305-&

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