DISLOCATION PROPAGATION AND ANNIHILATION IN INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY

The replication behavior of dislocations whose Burgers vectors are parallel to the growth surface has been evaluated in InP homoepitaxial layers. Results indicate that perfect dislocations with Burgers vectors lying in the growth surface are incorporated into epi-layers without an increased separation between Shockley partials in contrast to observations in silicon homoepitaxial layers. In addition, their orientation is observed to change so as to align themselves parallel to the growth direction. Evidence for the mechanisms associated with dislocation annihilation during homoepitaxy is also discussed.