DISLOCATION PROPAGATION AND ANNIHILATION IN INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY

被引：0
|
作者：
BEAM, EA [1 ]
MAHAJAN, S [1 ]
BONNER, WA [1 ]
机构：
[1] BELLCORE, RED BANK, NJ 07701 USA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The replication behavior of dislocations whose Burgers vectors are parallel to the growth surface has been evaluated in InP homoepitaxial layers. Results indicate that perfect dislocations with Burgers vectors lying in the growth surface are incorporated into epi-layers without an increased separation between Shockley partials in contrast to observations in silicon homoepitaxial layers. In addition, their orientation is observed to change so as to align themselves parallel to the growth direction. Evidence for the mechanisms associated with dislocation annihilation during homoepitaxy is also discussed.
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页码：193 / 198
页数：6
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