ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES

被引：27

作者：

HUNSPERGER, RG

MARSH, OJ

机构：

来源：

METALLURGICAL TRANSACTIONS | 1970年 / 1卷 / 03期

关键词：

D O I：

10.1007/BF02811583

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：603 / +

页数：1

共 16 条

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MEAD, CA .

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[7]

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[8]

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[9] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

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JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[10] ZN AND TE IMPLANTATIONS INTO GAAS [J].

MAYER, JW ;

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