TEMPERATURE-DEPENDENCE OF IMPURITY BREAKDOWN FIELD OF N-TYPE GE

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作者：
VESELOVA, LI
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：724 / 725
页数：2
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