COMPOUND FORMATION AT THE INTERFACE BETWEEN COBALT THIN-FILMS AND SINGLE-CRYSTAL GAAS

被引：29
作者：
GENUT, M [1 ]
EIZENBERG, M [1 ]
机构：
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 19期
关键词：
D O I：
10.1063/1.97855
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1358 / 1360
页数：3
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