THEORY OF THE ELECTRONIC AND ATOMIC-STRUCTURE OF SI(111) - SURFACE SPIN-POLARIZATION EFFECTS

被引:20
作者
CHADI, DJ
DELSOLE, R
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期
关键词
D O I
10.1116/1.571770
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:319 / 326
页数:8
相关论文
共 50 条
[1]   NEW MECHANISM FOR 2X1 RECONSTRUCTION OF SILICON (111) SURFACE [J].
ALLAN, G ;
LANNOO, M .
SURFACE SCIENCE, 1977, 63 (01) :11-20
[2]   SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1975, 12 (04) :1410-1417
[3]   OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES [J].
ASSMANN, J ;
MONCH, W .
SURFACE SCIENCE, 1980, 99 (01) :34-44
[4]   CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE [J].
BRENNAN, S ;
STOHR, J ;
JAEGER, R ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1414-1418
[5]   ELECTRONIC STATES AND ELECTRON-PHONON COUPLING AT THE 2X1 RECONSTRUCTED SI(111) SURFACE [J].
CASULA, F ;
SELLONI, A .
SOLID STATE COMMUNICATIONS, 1981, 37 (06) :495-499
[6]   BUCKLING RECONSTRUCTION ON LASER-ANNEALED SI(111) SURFACES [J].
CHABAL, YJ ;
ROWE, JE ;
ZWEMER, DA .
PHYSICAL REVIEW LETTERS, 1981, 46 (09) :600-603
[7]   ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065
[8]   SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1290-1296
[9]   THEORETICAL-STUDIES OF SI(111) SURFACE-STRUCTURES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :856-859
[10]   SURFACE-STATES ON SI (111) 2 X 1 DETECTED BY EXTERNAL REFLECTIVITY [J].
CHIARADIA, P ;
CHIAROTTI, G ;
NANNARONE, S ;
SASSAROLI, P .
SOLID STATE COMMUNICATIONS, 1978, 26 (11) :813-815