INFLUENCE OF PH IN ELECTROLYTIC HYDROGEN TERMINATION OF SILICON

被引：11

作者：

BITZER, T ^{[1
]}

LEWERENZ, HJ ^{[1
]}

GRUYTERS, M ^{[1
]}

JACOBI, K ^{[1
]}

机构：

[1] MAX PLANCK GESELL,FRITZ HABER INST,W-1000 BERLIN 33,GERMANY

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1993年 / 359卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(93)80416-F

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

[No abstract available]

引用

页码：287 / 292

页数：6

共 16 条

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[2]

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[8] A REASSESSMENT OF ELECTRON-ESCAPE DEPTHS IN SILICON AND THERMALLY GROWN SILICON DIOXIDE THIN-FILMS [J].

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CARIM, AH .

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