GAS SOURCE MEE GROWTH OF INGAAS/INP SUPERLATTICES

被引：15
|
作者：
ASAHI, H
KOHARA, T
SONI, RK
TAKEYASU, N
ASAMI, K
EMURA, S
GONDA, S
机构：
[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567, 8-1, Mihogaoka
来源：
APPLIED SURFACE SCIENCE | 1992年 / 60-1卷
关键词：
D O I：
10.1016/0169-4332(92)90486-H
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
InGaAs/InP heterostructures having atomically controlled interfaces are grown by gas source migration-enhanced epitaxy (GS MEE) on (001)InP substrates at 350-degrees-C. RHEED intensity oscillations persisted for over 1 b with the same amplitude and phase during the growth of InGaAs and InP for appropriate supply times of Group III and Group V atoms and proper supply interruption times. The RHEED intensity traces during the growth of InGaAs/InP superlattices as well as Raman spectra from InGaAs/InP quantum well structures suggest the formation of tailored InGaAs/InP heterointerfaces.
引用
收藏
页码：625 / 630
页数：6
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